標準號：BS EN 60749-22-2003
中文標準名稱：半導體器件.機械和氣候試驗方法.粘接強度
英文標準名稱：Semiconductor devices - Mechanical and climatic test methods - Bond strength
標準類型：L40
發(fā)布日期：2003/7/4 12:00:00
實施日期：2003/7/4 12:00:00
中國標準分類號：L40
國際標準分類號：31.080.01
適用范圍：This part of IEC 60749 is applicable to semiconductor devices (discrete devices and integrated circuits). The object of this part is to measure bond strength or determine compliance with specified bond strength requirements. NOTE This test is identical to the test method contained in clause 6 of chapter 2 of IEC 60749 (1996), amendment 1, apart from changes to this clause and renumbering. 1 General description of the test Seven test methods are described, each having its own purpose, that is: - methods A and B are intended for testing internal bonds of a device by a direct pulling of the connecting wire; - method C is intended for bonds external to the device and consists of a peeling stress exerted between the lead or terminal and the board or substrate; - method D is intended for internal bonds and consists of a shear stress applied between a die and a substrate or similar face-bonded configurations; - methods E and F are intended for external bonds and consist of a push-off or a pull-off stress exerted between a die and the substrate; - method G is intended to test the mechanical resistance of wire bonds to a shear force. 2 Description of the test apparatus (for all methods) The apparatus for this test should consist of suitable equipment for applying the specified stress on the bond, lead wire or terminals as required in the specified test method. A calibrated measurement and indication of the applied stress in newtons (N) at the point of failure should be provided by equipment capable of measuring stresses up to and including 100 mN with an accuracy of ±2,5 mN, stresses between 100 mN and 500 mN with an accuracy of ±5 mN, and stresses exceeding 500 mN with an accuracy of ±2,5 % of the indicated value. This test is intended to be applied to the wire-to-die bond, wire-to-substrate bond, or the wire-to-terminal bond inside the package of wire-connected semiconductor devices bonded by soldering, thermocompression, ultrasonic and other related techniques.